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Title: Identification of luminescent surface defect in SiC quantum dots

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4907674· OSTI ID:22420271
; ;  [1]
  1. Department of Physics, Southeast University, Nanjing 211189 (China)

The surface defect that results in the usually observed blue luminescence in the SiC quantum dots (QDs) remains unclear. We experimentally identify that the surface defect C=O (in COO) is responsible for this constant blue luminescence. The HO···C=O [n{sub (OH)} → π*{sub (CO)}] interaction between the hydroxyl and carbonyl groups changes the energy levels of C=O and makes the light absorption/emission arise at around 326/438 nm. Another surface defect (Si–Si) is identified and its light absorption contributes to both C=O-related luminescence and quantum-confinement luminescence of the SiC QDs.

OSTI ID:
22420271
Journal Information:
Applied Physics Letters, Vol. 106, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English