Synchrotron x-ray diffraction study of micro-patterns obtained by spatially selective hydrogenation of GaAsN
- CNR, Institute for Photonics and Nanotechnologies, via Cineto Romano 42, 00156 Roma (Italy)
- School of Physics and Astronomy, The University of Nottingham, NG7 2RD Nottingham (United Kingdom)
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette Cedex (France)
- Department of Physics, Sapienza Università di Roma, Piazzale A. Moro 2, 00185 Roma (Italy)
We report a comparative synchrotron radiation x-ray diffraction study of GaAs{sub 1−y}N{sub y} micro-structures obtained by two different patterning methods: spatially selective H incorporation achieved by using H-opaque masks and spatially selective H removal attained by laser writing. These methods are emerging as original routes for fabrication of micro- and nano-structures with in-plane modulation of the bandgap energy. By measuring the out-of-plane and in-plane lattice parameters, we find that for both patterning approaches the largest part of the micro-structure volume remains tensile-strained and pseudomorphic to the substrate, regardless of the compressive-strained hydrogenated barriers. However, a larger lattice disorder is probed in the laser-written micro-structures and attributed to partial removal of H and/or strain changes at the micro-structure boundaries. This larger lattice disorder is confirmed by photoluminescence studies.
- OSTI ID:
- 22420245
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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