Growth-induced electron mobility enhancement at the LaAlO{sub 3}/SrTiO{sub 3} interface
- Department of Quantum Matter Physics, Université de Genève, 24 Quai Ernest-Ansermet, 1211 Genève 4 (Switzerland)
We have studied the electronic properties of the 2D electron liquid present at the LaAlO{sub 3}/SrTiO{sub 3} interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈10 000 cm{sup 2} V{sup −1} s{sup −1}) and the lowest sheet carrier density (≈5×10{sup 12} cm{sup −2}). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800–900 °C) display carrier densities in the range of ≈2−5×10{sup 13} cm{sup −2} and mobilities of ≈1000 cm{sup 2} V{sup −1} s{sup −1} at 4 K. Reducing their carrier density by field effect to 8×10{sup 12} cm{sup −2} lowers their mobilities to ≈50 cm{sup 2} V{sup −1} s{sup −1} bringing the conductance to the weak-localization regime.
- OSTI ID:
- 22420240
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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