Low-resistivity bulk silicon prepared by hot-pressing boron- and phosphorus-hyperdoped silicon nanocrystals
- State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027 (China)
- Nisshin Steel Co. Ltd., Marunouchi 3 Chome, Chiyoda-ku, Tokyo 100-8366 (Japan)
Technologically important low-resistivity bulk Si has been usually produced by the traditional Czochralski growth method. We now explore a novel method to obtain low-resistivity bulk Si by hot-pressing B- and P-hyperdoped Si nanocrystals (NCs). In this work bulk Si with the resistivity as low as ∼ 0.8 (40) mΩ•cm has been produced by hot pressing P (B)-hyperdoped Si NCs. The dopant type is found to make a difference for the sintering of Si NCs during the hot pressing. Bulk Si hot-pressed from P-hyperdoped Si NCs is more compact than that hot-pressed from B-hyperdoped Si NCs when the hot-pressing temperature is the same. This leads to the fact that P is more effectively activated to produce free carriers than B in the hot-pressed bulk Si. Compared with the dopant concentration, the hot-pressing temperature more significantly affects the structural and electrical properties of hot-pressed bulk Si. With the increase of the hot-pressing temperature the density of hot-pressed bulk Si increases. The highest carrier concentration (lowest resistivity) of bulk Si hot-pressed from B- or P-hyperdoped Si NCs is obtained at the highest hot-pressing temperature of 1050 °C. The mobility of carriers in the hot-pressed bulk Si is low (≤ ∼ 30 cm{sup -2}V{sup -1}s{sup -1}) mainly due to the scattering of carriers induced by structural defects such as pores.
- OSTI ID:
- 22420194
- Journal Information:
- AIP Advances, Vol. 4, Issue 12; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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