Impact of Mg content on native point defects in Mg{sub x}Zn{sub 1−x}O (0 ≤ x ≤ 0.56)

Journal Article · Mon Jun 01 00:00:00 EDT 2015 · APL materials

DOI:https://doi.org/10.1063/1.4915491· OSTI ID:22415300

Perkins, J.; Foster, G. M. ^[1]; Myer, M.; Mehra, S. ^[2]; Chauveau, J. M. ^[3]; Hierro, A. ^[4]; Redondo-Cubero, A. ^[5]; Windl, W. ^[6]

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1. Department of Physics, The Ohio State University, 191 West Woodruff Ave., Columbus, Ohio 43210 (United States)
2. Columbus School for Girls, 56 S. Columbia Ave., Columbus, Ohio 43209 (United States)
3. Centre de Recherche sur l’Hetero-Epitaxie et ses Applications, Centre National de la Recherche Scientifique (CRHEA-CNRS), Rue B. Gregory, F-06560 Valbonne Sophia Antipolis (France)
4. Dpto. Ingeniería Electrónica and ISOM, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
5. Dpto. Física Aplicada y Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, 28049 Madrid (Spain)
6. Department of Materials Science and Engineering, The Ohio State University, 2041 College Road N., Columbus, Ohio 43210 (United States)

We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to measure the densities, energy levels, and spatial distributions of zinc/magnesium cation and oxygen vacancies in isostructural, single-phase, non-polar Mg{sub x}Zn{sub 1−x}O alloys over a wide (0 ≤ x ≤ 0.56) range. Within this wide range, both defect types exhibit strong Mg content-dependent surface segregation and pronounced bulk density minima corresponding to unit cell volume minima, which can inhibit defect formation due to electrostatic repulsion. Mg in ZnO significantly reduces native defect densities and their non-polar surface segregation, both major factors in carrier transport and doping of these oxide semiconductors.

• OSTI ID: 22415300
• Journal Information: APL materials, Vol. 3, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BULK DENSITY
CATHODOLUMINESCENCE
CATIONS
CONCENTRATION RATIO
EMISSION SPECTROSCOPY
ENERGY-LEVEL DENSITY
MAGNESIUM COMPOUNDS
OXYGEN
SEGREGATION
SEMICONDUCTOR MATERIALS
SURFACES
VACANCIES
ZINC
ZINC OXIDES