skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Alkaline earth stannates: The next silicon?

Journal Article · · APL materials
DOI:https://doi.org/10.1063/1.4921338· OSTI ID:22415298
;  [1];  [1];  [2];  [2]
  1. Department of Applied Physics, Yale University, New Haven, Connecticut 06520 (United States)
  2. Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)

Semiconductor materials are being used in an increasingly diverse array of applications, with new device concepts being proposed each year for solar cells, flat-panel displays, sensors, memory, and spin transport. This rapid progress of invention outpaces the development of new semiconductor materials with the required properties and performance. In many applications, high carrier mobility at room temperature is required in addition to specific functional properties critical to the device concept. We review recent developments on high mobility stannate perovskite oxide materials and devices.

OSTI ID:
22415298
Journal Information:
APL materials, Vol. 3, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
Country of Publication:
United States
Language:
English

Similar Records

TPV plasma filters based on cadmium stannate
Journal Article · Thu Feb 01 00:00:00 EST 1996 · AIP Conference Proceedings · OSTI ID:22415298

Blue photoluminescence in Ti-doped alkaline-earth stannates
Journal Article · Sun Apr 15 00:00:00 EDT 2007 · Journal of Solid State Chemistry · OSTI ID:22415298

High-performance, transparent conducting oxides based on cadmium stannate
Journal Article · Sat Jun 01 00:00:00 EDT 1996 · Journal of Electronic Materials · OSTI ID:22415298