Tailoring the electronic transitions of NdNiO{sub 3} films through (111){sub pc} oriented interfaces

Gibert, M.; Zubko, P.; Scherwitzl, R.; Triscone, J. -M.; Bisogni, V.; Schmitt, T.; He, F.; Sutarto, R.; Viret, M.; Sawatzky, G. A.

doi:10.1063/1.4919803

Title: Tailoring the electronic transitions of NdNiO{sub 3} films through (111){sub pc} oriented interfaces

Journal Article · Mon Jun 01 00:00:00 EDT 2015 · APL materials

DOI:https://doi.org/10.1063/1.4919803· OSTI ID:22415296

Gibert, M.; Zubko, P.; Scherwitzl, R.; Triscone, J. -M. ^[1]; Bisogni, V.; Schmitt, T. ^[2]; He, F.; Sutarto, R. ^[3]; Viret, M. ^[1]; Sawatzky, G. A. ^[4]

Department of Quantum Matter Physics, University of Geneva, CH-1211 Geneva (Switzerland)
Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen (Switzerland)
Canadian Light Source, Saskatoon, Saskatchewan S7N 2V3 (Canada)
Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia V6T 1Z1 (Canada)

Bulk NdNiO{sub 3} and thin films grown along the pseudocubic (001){sub pc} axis display a 1st order metal to insulator transition (MIT) together with a Néel transition at T = 200 K. Here, we show that for NdNiO{sub 3} films deposited on (111){sub pc} NdGaO{sub 3}, the MIT occurs at T = 335 K and the Néel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111){sub pc} surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.

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OSTI ID:: 22415296

Journal Information:: APL materials, Vol. 3, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X

Country of Publication:: United States

Language:: English

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Title: Tailoring the electronic transitions of NdNiO{sub 3} films through (111){sub pc} oriented interfaces

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