Electric field effects in graphene/LaAlO{sub 3}/SrTiO{sub 3} heterostructures and nanostructures
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260 (United States)
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138 (United States)
We report the development and characterization of graphene/LaAlO{sub 3}/SrTiO{sub 3} heterostructures. Complex-oxide heterostructures are created by pulsed laser deposition and are integrated with graphene using both mechanical exfoliation and transfer from chemical-vapor deposition on ultraflat copper substrates. Nanoscale control of the metal-insulator transition at the LaAlO{sub 3}/SrTiO{sub 3} interface, achieved using conductive atomic force microscope lithography, is demonstrated to be possible through the graphene layer. LaAlO{sub 3}/SrTiO{sub 3}-based electric field effects using a graphene top gate are also demonstrated. The ability to create functional field-effect devices provides the potential of graphene-complex-oxide heterostructures for scientific and technological advancement.
- OSTI ID:
- 22415293
- Journal Information:
- APL materials, Vol. 3, Issue 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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