Engineering ferroelectric tunnel junctions through potential profile shaping
Abstract
We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.
- Authors:
-
- Unité Mixte de Physique CNRS/Thales, 1 Av. Fresnel, 91767 Palaiseau, France and Université Paris-Sud, 91405 Orsay (France)
- Thales Research and Technology, 1 Av. Fresnel, 91767 Palaiseau (France)
- Publication Date:
- OSTI Identifier:
- 22415287
- Resource Type:
- Journal Article
- Journal Name:
- APL materials
- Additional Journal Information:
- Journal Volume: 3; Journal Issue: 6; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BISMUTH COMPOUNDS; COBALT; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRONIC STRUCTURE; FERRITES; FERROELECTRIC MATERIALS; IRIDIUM; NICKEL; TEMPERATURE RANGE 0273-0400 K; TUNGSTEN; TUNNEL EFFECT; WORK FUNCTIONS
Citation Formats
Boyn, S., Garcia, V., E-mail: vincent.garcia@thalesgroup.com, Fusil, S., Carrétéro, C., Garcia, K., Collin, S., Deranlot, C., Bibes, M., Barthélémy, A., and Xavier, S. Engineering ferroelectric tunnel junctions through potential profile shaping. United States: N. p., 2015.
Web. doi:10.1063/1.4922769.
Boyn, S., Garcia, V., E-mail: vincent.garcia@thalesgroup.com, Fusil, S., Carrétéro, C., Garcia, K., Collin, S., Deranlot, C., Bibes, M., Barthélémy, A., & Xavier, S. Engineering ferroelectric tunnel junctions through potential profile shaping. United States. https://doi.org/10.1063/1.4922769
Boyn, S., Garcia, V., E-mail: vincent.garcia@thalesgroup.com, Fusil, S., Carrétéro, C., Garcia, K., Collin, S., Deranlot, C., Bibes, M., Barthélémy, A., and Xavier, S. 2015.
"Engineering ferroelectric tunnel junctions through potential profile shaping". United States. https://doi.org/10.1063/1.4922769.
@article{osti_22415287,
title = {Engineering ferroelectric tunnel junctions through potential profile shaping},
author = {Boyn, S. and Garcia, V., E-mail: vincent.garcia@thalesgroup.com and Fusil, S. and Carrétéro, C. and Garcia, K. and Collin, S. and Deranlot, C. and Bibes, M. and Barthélémy, A. and Xavier, S.},
abstractNote = {We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profile in ferroelectric tunnel junctions based on super-tetragonal BiFeO{sub 3}. Large variations of the transport properties are observed at room temperature. In particular, the analysis of current vs. voltage curves by a direct tunneling model indicates that the metal/ferroelectric interfacial barrier height increases with the top-electrode work function. While larger metal work functions result in larger OFF/ON ratios, they also produce a large internal electric field which results in large and potentially destructive switching voltages.},
doi = {10.1063/1.4922769},
url = {https://www.osti.gov/biblio/22415287},
journal = {APL materials},
issn = {2166-532X},
number = 6,
volume = 3,
place = {United States},
year = {Mon Jun 01 00:00:00 EDT 2015},
month = {Mon Jun 01 00:00:00 EDT 2015}
}
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