High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Tappero, R.; Yang, G.; Gul, R.; James, R. B.; Lee, K.; Lee, W.

doi:10.1063/1.4907250

Title: High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method

Journal Article · Sun Feb 01 00:00:00 EST 2015 · APL materials

DOI:https://doi.org/10.1063/1.4907250· OSTI ID:22415251

Roy, U. N.; Bolotnikov, A. E.; Camarda, G. S.; Cui, Y.; Hossain, A.; Tappero, R.; Yang, G.; Gul, R.; James, R. B. ^[1]; Lee, K.; Lee, W. ^[1]

Brookhaven National Laboratory, Upton, New York 11973 (United States)

We obtained high-quality CdTe{sub x}Se{sub 1−x} (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line. The compositional homogeneity was highly uniform throughout the ingot, and the effective segregation coefficient of Se was ∼1.0. This high uniformity offers potential opportunity to enhance the yield of the materials for both infrared substrate and radiation-detector applications, so greatly lowering the cost of production and also offering us the prospect to grow large-diameter ingots for use as large-area substrates and for producing higher efficiency gamma-ray detectors. The concentration of secondary phases was found to be much lower, by eight- to ten fold compared to that of conventional Cd{sub x}Zn{sub 1−x}Te (CdZnTe or CZT)

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OSTI ID:: 22415251

Journal Information:: APL materials, Vol. 3, Issue 2; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X

Country of Publication:: United States

Language:: English

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An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers Gul, R.; Roy, U. N.; James, R. B. Journal of Applied Physics, Vol. 121, Issue 11 https://doi.org/10.1063/1.4978377	journal	March 2017
Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique Roy, U. N.; Okobiah, O. K.; Camarda, G. S. AIP Advances, Vol. 8, Issue 10 https://doi.org/10.1063/1.5040362	journal	October 2018
Influence of deep levels on the electrical transport properties of CdZnTeSe detectors Rejhon, M.; Franc, J.; Dědič, V. Journal of Applied Physics, Vol. 124, Issue 23 https://doi.org/10.1063/1.5063850	journal	December 2018

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Title: High compositional homogeneity of CdTe{sub x}Se{sub 1−x} crystals grown by the Bridgman method

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