Selective growth of single phase VO{sub 2}(A, B, and M) polymorph thin films

Journal Article · Sun Feb 01 00:00:00 EST 2015 · APL materials

DOI:https://doi.org/10.1063/1.4906880· OSTI ID:22415250

Srivastava, Amar; Saha, Surajit ^[1]; Rotella, Helene ^[2]; Pal, Banabir ^[3]; Kalon, Gopinadhan; Mathew, Sinu; Motapothula, Mallikarjuna; Dykas, Michal ^[2]; Yang, Ping ^[4]; Okunishi, Eiji ^[5]; Sarma, D. D. ^[3]

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1. Department of Physics, National University of Singapore, Singapore 117542 (Singapore)
2. NUSNNI-NanoCore, National University of Singapore, Singapore 117576 (Singapore)
3. Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012 (India)
4. Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore)
5. Electron Optics Division, JEOL Ltd., Tokyo 196-8558 (Japan)

We demonstrate the growth of high quality single phase films of VO{sub 2}(A, B, and M) on SrTiO{sub 3} substrate by controlling the vanadium arrival rate (laser frequency) and oxidation of the V atoms. A phase diagram has been developed (oxygen pressure versus laser frequency) for various phases of VO{sub 2} and their electronic properties are investigated. VO{sub 2}(A) phase is insulating VO{sub 2}(B) phase is semi-metallic, and VO{sub 2}(M) phase exhibits a metal-insulator transition, corroborated by photo-electron spectroscopic studies. The ability to control the growth of various polymorphs opens up the possibility for novel (hetero)structures promising new device functionalities.

• OSTI ID: 22415250
• Journal Information: APL materials, Vol. 3, Issue 2; Other Information: (c) 2015 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRONS
OXIDATION
OXYGEN
PHASE DIAGRAMS
PHASE TRANSFORMATIONS
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS
VANADIUM
VANADIUM OXIDES