Electron transport in endohedral metallofullerene Ce@C{sub 82} single-molecule transistors
- Center for Photonics Electronics Convergence, Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
We have investigated the electron transport in endohedral metallofullerene Ce@C{sub 82} single-molecule transistors (SMTs) together with that in reference C{sub 84} SMTs. The vibrational modes (bending and stretching) of the encapsulated single Ce atom in the C{sub 82} cage appear in Coulomb stability diagrams for the single-electron tunneling through Ce@C{sub 82} molecules, demonstrating the single-atom sensitivity of the transport measurements. When a bias voltage larger than 100 mV is applied across the source/drain electrodes, large hysteretic behavior is observed in the current-voltage (I-V) characteristics. At the same time, the pattern in the Coulomb stability diagram is changed. No such hysteretic behavior is observed in the I-V curves of hollow-cage C{sub 84} SMTs, even when the bias voltage exceeds 500 mV. This hysteretic change in the I-V characteristics is induced by a nanomechanical change in the configuration of the Ce@C{sub 82} molecule in the nanogap electrode due to the electric dipole that exists in Ce@C{sub 82}.
- OSTI ID:
- 22415208
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Automated HPLC separation of endohedral metallofullerene ScC{sub 2n} and YC{sub 2n} fractions
Sc[subscript 3]N@(C[subscript 80]-I[subscript h](7))(CF[subscript 3])[subscript 14] and Sc[subscript 3]N@(C[subscript 80]-I[subscript h](7))CF[subscript 3])[subscript 16]. Endohedral Metallofullerene Derivatives with Exohedral Addends on Four and Eight Triple-Hexagon Junctions. Does the Sc[subscript 3]N Cluster Control the Addition Pattern or Vice Versa?