Nonvolatile data storage using mechanical force-induced polarization switching in ferroelectric polymer

Journal Article · Mon Jan 26 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906859· OSTI ID:22415201

Chen, Xin; Tang, Xin; Chen, Xiang-Zhong; Chen, Yu-Lei; Shen, Qun-Dong ^[1]; Guo, Xu; Ge, Hai-Xiong ^[2]

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1. Department of Polymer Science and Engineering and Key Laboratory of High Performance Polymer Materials and Technology of MOE, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093 (China)
2. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)

Ferroelectric polymers offer the promise of low-cost and flexible electronic products. They are attractive for information storage due to their spontaneous polarization which is usually switched by electric field. Here, we demonstrate that electrical signals can be readily written on ultra-thin ferroelectric polymer films by strain gradient-induced polarization switching (flexoelectric effect). A force with magnitude as small as 64nN is enough to induce highly localized (40 nm feature size) change in the polarization states. The methodology is capable of realizing nonvolatile memory devices with miniaturized cell size and storage density of tens to hundreds Gbit per square inch.

• OSTI ID: 22415201
• Journal Information: Applied Physics Letters, Vol. 106, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DATA
ELECTRIC FIELDS
FERROELECTRIC MATERIALS
FILMS
MEMORY DEVICES
POLARIZATION
POLYMERS
SIGNALS