Influence of the local heating position on the terahertz emission power from high-T{sub c} superconducting Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ} mesas

Journal Article · Mon Jan 26 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906768· OSTI ID:22415198

Watanabe, C.; Kitamura, T.; Asanuma, K.; Nakade, K.; Yasui, T.; Saiwai, Y.; Shibano, Y. ^[1]; Minami, H.; Kashiwagi, T.; Kadowaki, K. ^[1]; Yamamoto, T. ^[2]; Klemm, Richard A. ^[3]

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1. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan)
2. Wide Bandgap Materials Group, Optical and Electronic Materials Unit, Environment and Energy Materials Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
3. Department of Physics, University of Central Florida, Orlando, Florida 32816-2385 (United States)

Simultaneous measurements of spectroscopic terahertz emissions from and SiC photoluminescent local temperature T(r) distributions of high transition temperature T{sub c} superconducting Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ} rectangular mesa devices were made. A local region with T(r) > T{sub c} known as a hot spot can emerge with current bias changes. When the hot spot position was moved to a mesa end by locally heating the mesa surface with a laser beam, the intensity of the emission increased, but no changes to its frequency or line width were observed. These results suggest that higher power radiation is attainable by adjusting the hot spot position.

• OSTI ID: 22415198
• Journal Information: Applied Physics Letters, Vol. 106, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH OXIDES
CALCIUM OXIDES
COPPER OXIDES
HIGH-TC SUPERCONDUCTORS
LASERS
PHOTOLUMINESCENCE
SILICON CARBIDES
STRONTIUM OXIDES
THZ RANGE
TRANSITION TEMPERATURE