Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

Mitoma, Nobuhiko; Kizu, Takio; Lin, Meng-Fang; Tsukagoshi, Kazuhito; Aikawa, Shinya; Ou-Yang, Wei; Gao, Xu; Fujiwara, Akihiko; Nabatame, Toshihide

doi:10.1063/1.4907285

Title: Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants

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Abstract

The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.

Authors:

Mitoma, Nobuhiko; Kizu, Takio; Lin, Meng-Fang; Tsukagoshi, Kazuhito ^[1]; Aikawa, Shinya ^[1]; Ou-Yang, Wei ^[1]; Gao, Xu ^[1]; Fujiwara, Akihiko ^[2]; Nabatame, Toshihide ^[3]

International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
Research and Utilization Division, Japan Synchrotron Radiation Research Institute/SPring-8, Sayo, Hyogo 679-5198 (Japan)
MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)

Publication Date:: Mon Jan 26 00:00:00 EST 2015

OSTI Identifier:: 22415192

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; AMORPHOUS STATE; CARRIER DENSITY; CARRIER MOBILITY; CHARGE CARRIERS; DOPED MATERIALS; FREE ENTHALPY; INDIUM OXIDES; OXYGEN; SILICON; THIN FILMS; TUNGSTEN; VACANCIES

Citation Formats


                    Mitoma, Nobuhiko, Kizu, Takio, Lin, Meng-Fang, Tsukagoshi, Kazuhito, Aikawa, Shinya, Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Ou-Yang, Wei, Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062, Gao, Xu, Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials, Fujiwara, Akihiko, and Nabatame, Toshihide. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4907285.

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                    Mitoma, Nobuhiko, Kizu, Takio, Lin, Meng-Fang, Tsukagoshi, Kazuhito, Aikawa, Shinya, Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Ou-Yang, Wei, Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062, Gao, Xu, Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials, Fujiwara, Akihiko, & Nabatame, Toshihide. Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants.  United States.  https://doi.org/10.1063/1.4907285

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                    Mitoma, Nobuhiko, Kizu, Takio, Lin, Meng-Fang, Tsukagoshi, Kazuhito, Aikawa, Shinya, Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015, Ou-Yang, Wei, Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062, Gao, Xu, Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials, Fujiwara, Akihiko, and Nabatame, Toshihide. 2015.  
        "Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants".  United States.  https://doi.org/10.1063/1.4907285.

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@article{osti_22415192,

  title        = {Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants},

  author       = {Mitoma, Nobuhiko and Kizu, Takio and Lin, Meng-Fang and Tsukagoshi, Kazuhito and Aikawa, Shinya and Research Institute for Science and Technology, Kogakuin University, Hachioji, Tokyo 192-0015 and Ou-Yang, Wei and Department of Physics, Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, East China Normal University, 3663 North Zhongshan Road, Shanghai 200062 and Gao, Xu and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials and Fujiwara, Akihiko and Nabatame, Toshihide},

  abstractNote = {The dependence of oxygen vacancy suppression on dopant species in amorphous indium oxide (a-InO{sub x}) thin film transistors (TFTs) is reported. In a-InO{sub x} TFTs incorporating equivalent atom densities of Si- and W-dopants, absorption of oxygen in the host a-InO{sub x} matrix was found to depend on difference of Gibbs free energy of the dopants for oxidation. For fully oxidized films, the extracted channel conductivity was higher in the a-InO{sub x} TFTs containing dopants of small ionic radius. This can be explained by a reduction in the ionic scattering cross sectional area caused by charge screening effects.},

  doi          = {10.1063/1.4907285},

  url          = {https://www.osti.gov/biblio/22415192},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 4,

  volume       = 106,

  place        = {United States},

  year         = {Mon Jan 26 00:00:00 EST 2015},

  month        = {Mon Jan 26 00:00:00 EST 2015}

}

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