Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

Wang, Y. Y.; Cooper, D.; Bernier, N.; Rouviere, J.; Murray, C. E.; Bruley, J.

doi:10.1063/1.4906513

Title: Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography

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Abstract

The detailed strain distributions produced by embedded SiGe stressor structures are measured at high spatial resolution with high precision, with dual lens dark field electron holography and precession electron diffraction. Shear strain and lattice rotation within the crystalline lattice are observed at the boundaries between the SiGe and Si regions. The experimental results are compared to micromechanical modeling simulations to understand the mechanisms of elastic relaxation on all the modes of deformation at a sub-micron length scale.

Authors:

Wang, Y. Y. ^[1]; Cooper, D.; Bernier, N. ^[2]; Rouviere, J. ^[2]; Murray, C. E.; Bruley, J. ^[3]

IBM Micro-Electronics Division, 2070 Route 52, Hopewell Junction, New York 12570 (United States)
University Grenoble Alpes, F-38000 Grenoble (France)
IBM T. J. Watson Research Center, 1101 Kitchawan Road, Route 134, Yorktown Heights, New York 10598 (United States)

Publication Date:: Mon Jan 26 00:00:00 EST 2015

OSTI Identifier:: 22415191

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRON DIFFRACTION; ELECTRONS; GERMANIUM SILICIDES; NANOSTRUCTURES; SEMICONDUCTOR DEVICES; SILICON; SIMULATION; STRAINS

Citation Formats


                    Wang, Y. Y., Cooper, D., Bernier, N., CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, Rouviere, J., CEA, INAC, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, Murray, C. E., and Bruley, J. Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4906513.

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                    Wang, Y. Y., Cooper, D., Bernier, N., CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, Rouviere, J., CEA, INAC, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, Murray, C. E., & Bruley, J. Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography.  United States.  https://doi.org/10.1063/1.4906513

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                    Wang, Y. Y., Cooper, D., Bernier, N., CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, Rouviere, J., CEA, INAC, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9, Murray, C. E., and Bruley, J. 2015.  
        "Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography".  United States.  https://doi.org/10.1063/1.4906513.

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@article{osti_22415191,

  title        = {Nanoscale strain distributions in embedded SiGe semiconductor devices revealed by precession electron diffraction and dual lens dark field electron holography},

  author       = {Wang, Y. Y. and Cooper, D. and Bernier, N. and CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 and Rouviere, J. and CEA, INAC, MINATEC Campus, 17 rue des Martyrs, 38054 Grenoble Cedex 9 and Murray, C. E. and Bruley, J.},

  abstractNote = {The detailed strain distributions produced by embedded SiGe stressor structures are measured at high spatial resolution with high precision, with dual lens dark field electron holography and precession electron diffraction. Shear strain and lattice rotation within the crystalline lattice are observed at the boundaries between the SiGe and Si regions. The experimental results are compared to micromechanical modeling simulations to understand the mechanisms of elastic relaxation on all the modes of deformation at a sub-micron length scale.},

  doi          = {10.1063/1.4906513},

  url          = {https://www.osti.gov/biblio/22415191},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 4,

  volume       = 106,

  place        = {United States},

  year         = {Mon Jan 26 00:00:00 EST 2015},

  month        = {Mon Jan 26 00:00:00 EST 2015}

}

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