Negative differential transconductance in electrolyte-gated ruthenate

Journal Article · Mon Jan 19 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906534· OSTI ID:22415160

Hassan, Muhammad Umair ^[1]; Wimbush, Stuart C. ^[2]

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1. Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE (United Kingdom)
2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

We report on a study of electric field-induced doping of the highly conductive ruthenate SrRuO{sub 3} using an ionic liquid as the gate dielectric in a field-effect transistor configuration. Two distinct carrier transport regimes are identified for increasing positive gate voltage in thin (10 nm) films grown heteroepitaxially on SrTiO{sub 3} substrates. For V{sub g} = 2 V and lower, the sample shows an increased conductivity of up to 13%, as might be expected for electron doping of a metal. At higher V{sub g} = 2.5 V, we observe a large decrease in electrical conductivity of >20% (at 4.2 K) due to the prevalence of strongly blocked conduction pathways.

• OSTI ID: 22415160
• Journal Information: Applied Physics Letters, Vol. 106, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTROLYTES
FIELD EFFECT TRANSISTORS
METALS
STRONTIUM TITANATES
SUBSTRATES