Magnetoresistance effects and spin-valve like behavior of an arrangement of two MnAs nanoclusters
- Institute of Experimental Physics I, Justus-Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)
- Research Center for Integrated Quantum Electronics, Hokkaido University, North 13, West 8, Sapporo 060-8628 (Japan)
We report on magnetotransport measurements on a MnAs nanocluster arrangement consisting of two elongated single-domain clusters connected by a metal spacer. The arrangement was grown on GaAs(111)B-substrates by selective-area metal organic vapor phase epitaxy. Its structural properties were investigated using scanning-electron microscopy and atomic-force microscopy, while its magnetic domain structure was analyzed by magnetic-force microscopy. The magnetoresistance of the arrangement was investigated at 120 K for two measurement geometries with the magnetic field oriented in the sample plane. For both geometries, discrete jumps of the magnetoresistance of the MnAs nanocluster arrangement were observed. These jumps can be explained by magnetic-field induced switching of the relative orientation of the magnetizations of the two clusters which affects the spin-dependent scattering in the interface region between the clusters. For a magnetic field orientation parallel to the nanoclusters' elongation direction a spin-valve like behavior was observed, showing that ferromagnetic nanoclusters may be suitable building blocks for planar magnetoelectronic devices.
- OSTI ID:
- 22415140
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural, electronic, and magnetic properties of single MnAs nanoclusters in GaAs
Role of Structurally and Magnetically Modified Nanoclusters in Colossal Magnetoresistance