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Title: Localization of electrons in dome-shaped GeSi/Si islands

Abstract

We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n{sup +}-type bottom and top Si layers. An in-plane polarized photoresponse in the 85–160 meV energy region has been observed and ascribed to the optical excitation of electrons from states confined in the strained Si near the dome apexes to the continuum states of unstrained Si. The electron confinement is caused by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried GeSi quantum dots. Sensitivity of the device to the normal incidence radiation proves a zero-dimensional nature of confined electronic wave functions.

Authors:
; ; ; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science, prospekt Lavrent'eva 13, 630090 Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22415137
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRONS; GERMANIUM SILICIDES; LAYERS; MEV RANGE 100-1000; MEV RANGE 10-100; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPY; WAVE FUNCTIONS

Citation Formats

Yakimov, A. I., E-mail: yakimov@isp.nsc.ru, Tomsk State University, 634050 Tomsk, Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A., Kuchinskaya, P. A., and Dvurechenskii, A. V. Localization of electrons in dome-shaped GeSi/Si islands. United States: N. p., 2015. Web. doi:10.1063/1.4906522.
Yakimov, A. I., E-mail: yakimov@isp.nsc.ru, Tomsk State University, 634050 Tomsk, Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A., Kuchinskaya, P. A., & Dvurechenskii, A. V. Localization of electrons in dome-shaped GeSi/Si islands. United States. https://doi.org/10.1063/1.4906522
Yakimov, A. I., E-mail: yakimov@isp.nsc.ru, Tomsk State University, 634050 Tomsk, Kirienko, V. V., Bloshkin, A. A., Armbrister, V. A., Kuchinskaya, P. A., and Dvurechenskii, A. V. 2015. "Localization of electrons in dome-shaped GeSi/Si islands". United States. https://doi.org/10.1063/1.4906522.
@article{osti_22415137,
title = {Localization of electrons in dome-shaped GeSi/Si islands},
author = {Yakimov, A. I., E-mail: yakimov@isp.nsc.ru and Tomsk State University, 634050 Tomsk and Kirienko, V. V. and Bloshkin, A. A. and Armbrister, V. A. and Kuchinskaya, P. A. and Dvurechenskii, A. V.},
abstractNote = {We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n{sup +}-type bottom and top Si layers. An in-plane polarized photoresponse in the 85–160 meV energy region has been observed and ascribed to the optical excitation of electrons from states confined in the strained Si near the dome apexes to the continuum states of unstrained Si. The electron confinement is caused by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried GeSi quantum dots. Sensitivity of the device to the normal incidence radiation proves a zero-dimensional nature of confined electronic wave functions.},
doi = {10.1063/1.4906522},
url = {https://www.osti.gov/biblio/22415137}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 3,
volume = 106,
place = {United States},
year = {Mon Jan 19 00:00:00 EST 2015},
month = {Mon Jan 19 00:00:00 EST 2015}
}