Nano suboxide layer generated in Ta{sub 2}O{sub 5} by Ar{sup +} ion irradiation
- Data Storage Institute, Agency for Science, Technology and Research - A*STAR, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)
Ta{sub 2}O{sub 5}/TaO{sub x} heterostructure has become a leading oxide layer in memory cells and/or a bidirectional selector for resistive random access memory (RRAM). Although atomic layer deposition (ALD) was found to be uniquely suitable for depositing uniform and conformal films on complex topographies, it is hard to use ALD to grow suboxide TaO{sub x} layer. In this study, tantalum oxide films with a composition of Ta{sub 2}O{sub 5} were grown by ALD. Using Ar{sup +} ion irradiation, the suboxide was formed in the top layer of Ta{sub 2}O{sub 5} films by observing the Ta core level shift toward lower binding energy with angle-resolved X-ray photoelectron spectroscopy. By controlling the energy and irradiation time of an Ar{sup +} ion beam, Ta{sub 2}O{sub 5}/TaO{sub x} heterostructure can be reliably produced on ALD films, which provides a way to fabricate the critical switching layers of RRAM.
- OSTI ID:
- 22415127
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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