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Title: Position sensitivity of graphene field effect transistors to X-rays

Abstract

Device architectures that incorporate graphene to realize detection of electromagnetic radiation typically utilize the direct absorbance of radiation by graphene. This limits their effective area to the size of the graphene and their applicability to lower-energy, less penetrating forms of radiation. In contrast, graphene-based transistor architectures that utilize the field effect as the detection mechanism can be sensitive to interactions of radiation not only with graphene but also with the surrounding substrate. Here, we report the study of the position sensitivity and response of a graphene-based field effect transistor (GFET) to penetrating, well-collimated radiation (micro-beam X-rays), producing ionization in the substrate primarily away from graphene. It is found that responsivity and response speed are strongly dependent on the X-ray beam distance from graphene and the gate voltage applied to the GFET. To develop an understanding of the spatially dependent response, a model is developed that incorporates the volumetric charge generation, transport, and recombination. The model is in good agreement with the observed spatial response characteristics of the GFET and predicts a greater response potential of the GFET to radiation interacting near its surface. The study undertaken provides the necessary insight into the volumetric nature of the GFET response, essential formore » development of GFET-based detectors for more penetrating forms of ionizing radiation.« less

Authors:
; ;  [1]; ;  [2];  [2]
  1. Department of Mechanical and Nuclear Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  2. Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907 (United States)
Publication Date:
OSTI Identifier:
22415108
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 22; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; FIELD EFFECT TRANSISTORS; GRAPHENE; IONIZATION; RADIATION DETECTION; RECOMBINATION; SENSITIVITY; SUBSTRATES; X RADIATION

Citation Formats

Cazalas, Edward, Moore, Michael E., Jovanovic, Igor, Sarker, Biddut K., Childres, Isaac, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, Chen, Yong P., Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907. Position sensitivity of graphene field effect transistors to X-rays. United States: N. p., 2015. Web. doi:10.1063/1.4921755.
Cazalas, Edward, Moore, Michael E., Jovanovic, Igor, Sarker, Biddut K., Childres, Isaac, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, Chen, Yong P., Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, & School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907. Position sensitivity of graphene field effect transistors to X-rays. United States. https://doi.org/10.1063/1.4921755
Cazalas, Edward, Moore, Michael E., Jovanovic, Igor, Sarker, Biddut K., Childres, Isaac, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, Chen, Yong P., Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907. 2015. "Position sensitivity of graphene field effect transistors to X-rays". United States. https://doi.org/10.1063/1.4921755.
@article{osti_22415108,
title = {Position sensitivity of graphene field effect transistors to X-rays},
author = {Cazalas, Edward and Moore, Michael E. and Jovanovic, Igor and Sarker, Biddut K. and Childres, Isaac and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 and Chen, Yong P. and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907},
abstractNote = {Device architectures that incorporate graphene to realize detection of electromagnetic radiation typically utilize the direct absorbance of radiation by graphene. This limits their effective area to the size of the graphene and their applicability to lower-energy, less penetrating forms of radiation. In contrast, graphene-based transistor architectures that utilize the field effect as the detection mechanism can be sensitive to interactions of radiation not only with graphene but also with the surrounding substrate. Here, we report the study of the position sensitivity and response of a graphene-based field effect transistor (GFET) to penetrating, well-collimated radiation (micro-beam X-rays), producing ionization in the substrate primarily away from graphene. It is found that responsivity and response speed are strongly dependent on the X-ray beam distance from graphene and the gate voltage applied to the GFET. To develop an understanding of the spatially dependent response, a model is developed that incorporates the volumetric charge generation, transport, and recombination. The model is in good agreement with the observed spatial response characteristics of the GFET and predicts a greater response potential of the GFET to radiation interacting near its surface. The study undertaken provides the necessary insight into the volumetric nature of the GFET response, essential for development of GFET-based detectors for more penetrating forms of ionizing radiation.},
doi = {10.1063/1.4921755},
url = {https://www.osti.gov/biblio/22415108}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 106,
place = {United States},
year = {Mon Jun 01 00:00:00 EDT 2015},
month = {Mon Jun 01 00:00:00 EDT 2015}
}

Works referencing / citing this record:

Effective of the q -deformed pseudoscalar magnetic field on the charge carriers in graphene
journal, August 2016


Impact of γ-ray irradiation on graphene nano-disc non-volatile memory
journal, October 2018


Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates
journal, November 2019


X-ray induced electrostatic graphene doping via defect charging in gate dielectric
journal, April 2017


Towards a Graphene-Based Low Intensity Photon Counting Photodetector
journal, August 2016