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Title: Anisotropy of electrical and magnetic transport properties of epitaxial SrRuO{sub 3} thin films

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4914072· OSTI ID:22413206
;  [1]
  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016 (China)

SrRuO{sub 3} (SRO) thin films with different thickness (2–70 nm) have been grown on (001), (110), and (111) SrTiO{sub 3} substrates. The (001)-SRO films (2–8 nm) exhibited smooth flat surfaces whereas the (110)- and (111)-SRO films featured a faceted island structure. Room temperature resistivity and residual resistivity are the lowest for the (111)-SRO films (30–70 nm). Over all thicknesses, we observed enhanced magnetization in the (111)-SRO films (∼4 μ{sub B}/Ru) compared with that for the (001)- and (110)-SRO films (∼2 μ{sub B}/Ru and ∼3 μ{sub B}/Ru, respectively), suggesting a low-spin state t{sub 2g}(3↑,1↓), high-spin state t{sub 2g}(3↑)e{sub g}(1↑), and mixed low- and high-spin states for the (001)-, (111)-, and (110)-SRO films, respectively. The dependence of resistivity on temperatures near T{sub C} follows a power law with exponent β = 0.312 and β = 0.363 for the (110)- and (111)-SRO films, respectively. These critical exponents are consistent with magnetic data with scaling law M = C (T{sub C} − T){sup β}. At low temperatures, dM/dT and dρ/dT show a linear relationship in the temperature range for the Fermi liquid. These results suggest that the intrinsic electrical and magnetic transport properties are coupled.

OSTI ID:
22413206
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English