Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore)
Spectroscopic ellipsometry with photon energy in the 0.045–0.65 eV range was used to investigate germanium samples implanted with 30 keV phosphorus ions and annealed at 700 °C. The infrared response of implanted layers is dominated by free carrier absorption which is modeled using a Drude oscillator. The carrier concentration profiles were modeled using an error function, and compared with those obtained by electrochemical capacitance-voltage profiling and secondary ion mass spectrometry. In the flat region of the carrier concentration profile, average carrier concentration and mobility of 1.40 × 10{sup 19} cm{sup −3} and 336 cm{sup 2}V{sup −1}s{sup −1}, respectively, were obtained. A phosphorus diffusivity of ∼1.2 × 10{sup −13} cm{sup 2}/s was obtained. The mobility versus carrier concentration relationships obtained for the implanted samples are close to the empirical relationship for bulk Ge.
- OSTI ID:
- 22413125
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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