Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes

Journal Article · Sat Feb 21 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4906960· OSTI ID:22413124

Li, Panpan; Li, Hongjian; Li, Zhi; Kang, Junjie; Yi, Xiaoyan; Li, Jinmin; Wang, Guohong ^[1]

---

1. Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.

• OSTI ID: 22413124
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CHARGE CARRIERS
LIFETIME
LIGHT EMITTING DIODES
PHOTOLUMINESCENCE
RECOMBINATION
TEMPERATURE DEPENDENCE
TIME RESOLUTION