Interfacial trap states and improvement of low-temperature mobility by doping in InSb/AlInSb quantum wells
- Department of Applied Physics, Fukuoka University, 8-19-1 Nanakuma, Jonan, Fukuoka 814-0180 (Japan)
- Department of Electrical Engineering, Tokyo University of Science, Yamaguchi, Sanyo-Onoda, Yamaguchi 756-0884 (Japan)
- Asahi Kasei Corporation, 2-1 Samejima, Fuji, Shizuoka 416-8501 (Japan)
- The Noguchi Institute, 1-8-1 Kaga, Itabashi, Tokyo 173-0003 (Japan)
The effect of doping on InSb/Al{sub 0.1}In{sub 0.9}Sb quantum wells (QWs) was investigated, and it was found that doping improves the electron mobility at low temperatures and leads to a weaker dependence of the resistivity with temperature. The dependence of the carrier density on the well width revealed trap states at the interfaces of the QW whose sheet density per interface was estimated to be about 4 × 10{sup 10 }cm{sup −2}. The low mobility of undoped InSb QWs, in particular, at low temperature seems to have been caused by positively ionized impurity scattering at the interfacial trap states. Doping compensates for the trap states and enhances mobility by suppressing ionized impurity scattering. Thus, intentional doping is necessary for developing high-mobility InSb QW devices. The origin of the trap states is qualitatively discussed.
- OSTI ID:
- 22413118
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
MOVPE growth of high electron mobility AlGaN/GaN heterostructures
Gate-tunable high mobility remote-doped InSb/In{sub 1−x}Al{sub x}Sb quantum well heterostructures