Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

Journal Article · Sat Feb 07 04:00:00 UTC 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4907578· OSTI ID:22413059

Meade, Roy; Sandhu, Gurtej S. ^[1]

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1. Emerging Memory Group, Process R and D, Micron Technology Inc., Boise, Idaho 83707-0006 (United States)

We present numerical results from atomistic simulations of Cu in SiO{sub 2} and Al{sub 2}O{sub 3}, with an emphasis on the thermodynamic, kinetic, and electronic properties. The calculated properties of Cu impurity at various concentrations (9.91 × 10{sup 20 }cm{sup −3} and 3.41 × 10{sup 22 }cm{sup −3}) in bulk oxides are presented. The metal-insulator interfaces result in up to a ∼4 eV reduction in the formation energies relative to the crystalline bulk. Additionally, the importance of Cu-Cu interaction in lowering the chemical potential is introduced. These concepts are then discussed in the context of formation and stability of localized conductive paths in resistance-switching Random Access Memories (RRAM-M). The electronic density of states and non-equilibrium transmission through these localized paths are studied, confirming conduction by showing three orders of magnitude increase in the electron transmission. The dynamic behavior of the conductive paths is investigated with atomistic drift-diffusion calculations. Finally, the paper concludes with a molecular dynamics simulation of a RRAM-M cell that attempts to combine the aforementioned phenomena in one self-consistent model.

• OSTI ID: 22413059
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
CONCENTRATION RATIO
COPPER
DENSITY OF STATES
DIELECTRIC MATERIALS
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRONS
FORMATION HEAT
INTERFACES
MOLECULAR DYNAMICS METHOD
PHASE STABILITY
POTENTIALS
RANDOMNESS
SILICON OXIDES