Sensitivity of CoSi{sub 2} precipitation in silicon to extra-low dopant concentrations. I. Experiment
- Centre de Sciences Nucléaires et de Sciences de la Matière, bâtiment 108, 91405 Orsay Campus (France)
- NRC “Kurchatov Institute,” Kurchatov Sq., 1, 123182 Moscow (Russian Federation)
- Department of Physical Problems of Materials Science, National Research Nuclear University MEPhI, 115409 Moscow (Russian Federation)
We demonstrate that the precipitation of cobalt disilicide phase in silicon during high-temperature (500 °C and 650 °C) implantation is noticeably affected by impurities of phosphorus and boron. Measurements of B-type CoSi{sub 2} cluster sizes and number densities as a function of implantation dose indicate that the number density of clusters progressively increases as the phosphorus concentration increases from 7 × 10{sup 11} to 8 × 10{sup 13 }cm{sup −3}. A tentative explanation of these observations is proposed based on the previously suggested mechanism of precipitate nucleation, and on the results of first principles calculations summarized in Paper II, published as a follow-up paper. The results imply that utmost care is to be taken when dealing with transition metal precipitation during ion implantation into silicon because variations in the dopant content can affect the reproducibility of results even at extremely low dopant concentrations.
- OSTI ID:
- 22413020
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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