Epi-cleaning of Ge/GeSn heterostructures

Journal Article · Wed Jan 28 00:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4906616· OSTI ID:22413013

Di Gaspare, L.; Sabbagh, D.; De Seta, M.; Sodo, A. ^[1]; Wirths, S.; Buca, D. ^[2]; Zaumseil, P. ^[3]; Schroeder, T. ^[3]

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1. Dipartimento di Scienze, Università Roma Tre, Viale Marconi 446, 00146 Rome (Italy)
2. Peter Grünberg Institute 9 and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Juelich, Juelich 52425 (Germany)
3. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)

We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

• OSTI ID: 22413013
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 4; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
CATALYTIC CRACKING
FILAMENTS
GERMANIUM
HETEROJUNCTIONS
HYDROGEN
ION MICROPROBE ANALYSIS
IRRADIATION
MASS SPECTROSCOPY
PHOTOELECTRON SPECTROSCOPY
RAMAN SPECTROSCOPY
STRAINS
TENSILE PROPERTIES
TIN
TUNGSTEN
X-RAY SPECTROSCOPY