Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors
- Engineering Research Center for Semiconductor Integration Technology, Institute Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
We investigated single electron tunneling through a phosphorus donor-induced quantum dot array in heavily n-doped junctionless nanowire transistor. Seven subpeaks splitting in current oscillations are clearly observed due to the coupling of quantum dot array under the bias voltage below 1.0 mV at the temperature of 6 K. The conduction system can be well described by a two-band Hubbard model. The activation energy of phosphorus donors is tuned by the gate voltage to be 7.0 meV for the lower Hubbard band and 4.4 meV for the upper Hubbard band due to the localization effects below threshold voltage. The evolution of electron behaviors in the quantum dots is identified by adjusting the gate voltage from quantum-dot regime to one-dimensional regime.
- OSTI ID:
- 22412966
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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