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Title: Multiferroic oxide thin films and heterostructures

Abstract

Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.

Authors:
 [1]; ;  [2];  [3]
  1. School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)
  2. Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)
  3. School of Physics, Shandong University, Jinan 250100 (China)
Publication Date:
OSTI Identifier:
22412797
Resource Type:
Journal Article
Journal Name:
Applied physics reviews
Additional Journal Information:
Journal Volume: 2; Journal Issue: 2; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1931-9401
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CORRELATIONS; COUPLING; DEGREES OF FREEDOM; ELECTRICAL PROPERTIES; INTERFACES; MAGNETIC PROPERTIES; MAGNETISM; OXIDES; PEROVSKITES; PHOTOVOLTAIC EFFECT; RARE EARTHS; SOLIDS; SUPERCONDUCTORS; THIN FILMS

Citation Formats

Lu, Chengliang, Hu, Weijin, Wu, Tom, and Tian, Yufeng. Multiferroic oxide thin films and heterostructures. United States: N. p., 2015. Web. doi:10.1063/1.4921545.
Lu, Chengliang, Hu, Weijin, Wu, Tom, & Tian, Yufeng. Multiferroic oxide thin films and heterostructures. United States. https://doi.org/10.1063/1.4921545
Lu, Chengliang, Hu, Weijin, Wu, Tom, and Tian, Yufeng. 2015. "Multiferroic oxide thin films and heterostructures". United States. https://doi.org/10.1063/1.4921545.
@article{osti_22412797,
title = {Multiferroic oxide thin films and heterostructures},
author = {Lu, Chengliang and Hu, Weijin and Wu, Tom and Tian, Yufeng},
abstractNote = {Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.},
doi = {10.1063/1.4921545},
url = {https://www.osti.gov/biblio/22412797}, journal = {Applied physics reviews},
issn = {1931-9401},
number = 2,
volume = 2,
place = {United States},
year = {Mon Jun 15 00:00:00 EDT 2015},
month = {Mon Jun 15 00:00:00 EDT 2015}
}