Preparation of ITO/SiO{sub x}/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering

Journal Article · Mon Mar 02 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4914325· OSTI ID:22412780

Du, H. W.; Yang, J.; Li, Y. H.; Xu, F. ^[1]; Xu, J. ^[2]

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1. SHU-SolarE R and D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China)
2. Instrumental Analysis and Research Center, Shanghai University, Shanghai 200444 (China)

Complete photo-generated minority carrier's quantum tunneling device under AM1.5 illumination is fabricated by depositing tin-doped indium oxide (ITO) on n-type silicon to form a structure of ITO/SiO{sub x}/n-Si heterojunction. The work function difference between ITO and n-Si materials essentially acts as the origin of built-in-field. Basing on the measured value of internal potential (V{sub bi} = 0.61 V) and high conversion efficiency (9.27%), we infer that this larger photo-generated holes tunneling occurs when a strong inversion layer at the c-Si surface appears. Also, the mixed electronic states in the ultra-thin intermediate region between ITO and n-Si play a defect-assisted tunneling.

• OSTI ID: 22412780
• Journal Information: Applied Physics Letters, Vol. 106, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
DOPED MATERIALS
ENERGY CONVERSION
HETEROJUNCTIONS
HOLES
INDIUM COMPOUNDS
INDIUM FLUORIDES
INDIUM OXIDES
LAYERS
N-TYPE CONDUCTORS
POTENTIALS
SILICON
SILICON OXIDES
SOLAR CELLS
SPUTTERING
TIN
TUNNEL EFFECT
WORK FUNCTIONS