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Title: Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

A single layer of graphene with dimensions of 20 mm × 20 mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm.
Authors:
; ; ;  [1] ;  [2] ; ;  [1] ;  [1] ;  [2] ;  [3]
  1. Institute of Applied Physics, Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573 (Japan)
  2. (Japan)
  3. National Institute for Materials Science, Tsukuba 305-0047 (Japan)
Publication Date:
OSTI Identifier:
22412771
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CATALYSTS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALS; DENSITY; GALLIUM; GRAPHENE; LAYERS; RAMAN SPECTROSCOPY; RESOLUTION; SUBSTRATES; SYNTHESIS; TRANSMISSION ELECTRON MICROSCOPY