Origins of low energy-transfer efficiency between patterned GaN quantum well and CdSe quantum dots

Journal Article · Mon Mar 02 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913533· OSTI ID:22412736

Xu, Xingsheng ^[1]

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1. State Key Laboratory of Integration Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

For hybrid light emitting devices (LEDs) consisting of GaN quantum wells and colloidal quantum dots, it is necessary to explore the physical mechanisms causing decreases in the quantum efficiencies and the energy transfer efficiency between a GaN quantum well and CdSe quantum dots. This study investigated the electro-luminescence for a hybrid LED consisting of colloidal quantum dots and a GaN quantum well patterned with photonic crystals. It was found that both the quantum efficiency of colloidal quantum dots on a GaN quantum well and the energy transfer efficiency between the patterned GaN quantum well and the colloidal quantum dots decreased with increases in the driving voltage or the driving time. Under high driving voltages, the decreases in the quantum efficiency of the colloidal quantum dots and the energy transfer efficiency can be attributed to Auger recombination, while those decreases under long driving time are due to photo-bleaching and Auger recombination.

• OSTI ID: 22412736
• Journal Information: Applied Physics Letters, Vol. 106, Issue 9; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CADMIUM SELENIDES
CRYSTALS
ELECTRIC POTENTIAL
ELECTROLUMINESCENCE
ENERGY TRANSFER
GALLIUM NITRIDES
QUANTUM DOTS
QUANTUM EFFICIENCY
QUANTUM WELLS
RECOMBINATION
VISIBLE RADIATION