Direct evidence of void passivation in Cu(InGa)(SSe){sub 2} absorber layers

Journal Article · Mon Feb 23 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913612· OSTI ID:22412731

Lee, Dongho; Kim, Young-Su; Mo, Chan B.; Huh, Kwangsoo; Yang, JungYup; Nam, Junggyu; Baek, Dohyun; Park, Sungchan; Kim, ByoungJune; Kim, Dongseop ^[1]; Lee, Jaehan ^[2]; Heo, Sung; Park, Jong-Bong ^[3]; Kang, Yoonmook ^[4]

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1. PV Development Team, Energy Solution Business Division, Samsung SDI, 467 Beonyeong-ro, Seobuk-gu, Cheonan-si, Chungcheongnam-do 331-330 (Korea, Republic of)
2. Core Technology Laboratory, Battery Research Center, Samsung SDI, 130 Samsung-ro, Yeongtong-gu Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of)
3. Analytical Engineering Group, Samsung Advanced Institute of Technology, 130 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803 (Korea, Republic of)
4. KUKIST Green School, Graduate School of Energy and Environment, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 136-701 (Korea, Republic of)

We have investigated the charge collection condition around voids in copper indium gallium sulfur selenide (CIGSSe) solar cells fabricated by sputter and a sequential process of selenization/sulfurization. In this study, we found direct evidence of void passivation by using the junction electron beam induced current method, transmission electron microscopy, and energy dispersive X-ray spectroscopy. The high sulfur concentration at the void surface plays an important role in the performance enhancement of the device. The recombination around voids is effectively suppressed by field-assisted void passivation. Hence, the generated carriers are easily collected by the electrodes. Therefore, when the S/(S + Se) ratio at the void surface is over 8% at room temperature, the device performance degradation caused by the recombination at the voids is negligible at the CIGSSe layer.

• OSTI ID: 22412731
• Journal Information: Applied Physics Letters, Vol. 106, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
CHARGE COLLECTION
CONCENTRATION RATIO
COPPER COMPOUNDS
ELECTRIC CONTACTS
GALLIUM SELENIDES
INDIUM SULFIDES
LAYERS
PASSIVATION
RECOMBINATION
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SPUTTERING
SURFACES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY