Transport properties of ultrathin black phosphorus on hexagonal boron nitride

Journal Article · Mon Feb 23 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913419· OSTI ID:22412724

Doganov, Rostislav A.; Özyilmaz, Barbaros ^[1]; Koenig, Steven P.; Yeo, Yuting ^[1]; Watanabe, Kenji; Taniguchi, Takashi ^[2]

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1. Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546 Singapore (Singapore)
2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

Ultrathin black phosphorus, or phosphorene, is a two-dimensional material that allows both high carrier mobility and large on/off ratios. Similar to other atomic crystals, like graphene or layered transition metal dichalcogenides, the transport behavior of few-layer black phosphorus is expected to be affected by the underlying substrate. The properties of black phosphorus have so far been studied on the widely utilized SiO{sub 2} substrate. Here, we characterize few-layer black phosphorus field effect transistors on hexagonal boron nitride—an atomically smooth and charge trap-free substrate. We measure the temperature dependence of the field effect mobility for both holes and electrons and explain the observed behavior in terms of charged impurity limited transport. We find that in-situ vacuum annealing at 400 K removes the p-doping of few-layer black phosphorus on both boron nitride and SiO{sub 2} substrates and reduces the hysteresis at room temperature.

• OSTI ID: 22412724
• Journal Information: Applied Physics Letters, Vol. 106, Issue 8; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BORON NITRIDES
CARRIER MOBILITY
CRYSTALS
ELECTRONS
FIELD EFFECT TRANSISTORS
GRAPHENE
HOLES
HYSTERESIS
LAYERS
PHOSPHORUS
SILICON OXIDES
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRAPS
TWO-DIMENSIONAL SYSTEMS