Enhancing the pH sensitivity by laterally synergic modulation in dual-gate electric-double-layer transistors

Journal Article · Mon Feb 16 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4913445· OSTI ID:22412669

Liu, Ning ^[1]; Hui Liu, Yang; Qiang Zhu, Li ^[2]; Feng, Ping; Shi, Yi; Wan, Qing ^[1]

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1. School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)
2. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

The sensitivity of a standard ion-sensitive field-effect transistor is limited to be 59.2 mV/pH (Nernst limit) at room temperature. Here, a concept based on laterally synergic electric-double-layer (EDL) modulation is proposed in order to overcome the Nernst limit. Indium-zinc-oxide EDL transistors with two laterally coupled gates are fabricated, and the synergic modulation behaviors of the two asymmetric gates are investigated. A high sensitivity of ∼168 mV/pH is realized in the dual-gate operation mode. Laterally synergic modulation in oxide-based EDL transistors is interesting for high-performance bio-chemical sensors.

• OSTI ID: 22412669
• Journal Information: Applied Physics Letters, Vol. 106, Issue 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
FIELD EFFECT TRANSISTORS
INDIUM COMPOUNDS
MODULATION
PERFORMANCE
SENSITIVITY
SENSORS
TEMPERATURE RANGE 0273-0400 K
ZINC OXIDES