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Title: Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy

Abstract

This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction. The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10{sup −5} (Δa/a) with a spatial resolution of ∼0.5 μm. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive μ-Raman and μ-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling of the strain relaxation dynamics in the investigated structures.

Authors:
;  [1]; ; ; ; ;  [2];  [1];  [2]
  1. European Synchrotron ESRF, Grenoble 38043 (France)
  2. IHP-Leibniz Institute for Innovative Microelectronics, Frankfurt (Germany)
Publication Date:
OSTI Identifier:
22412649
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 7; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; LATTICE PARAMETERS; MICROSCOPY; MICROSTRUCTURE; ORIENTATION; PHOTOLUMINESCENCE; RELAXATION; SEMICONDUCTOR MATERIALS; SILICON NITRIDES; SPATIAL DISTRIBUTION; SPATIAL RESOLUTION; STRAINS; VISIBLE RADIATION; X-RAY DIFFRACTION

Citation Formats

Chahine, G. A., Schülli, T. U., Zoellner, M. H., Guha, S., Reich, C., Zaumseil, P., Capellini, G., Richard, M. -I., Aix-Marseille Université, CNRS, IM2NP UMR 7334, Marseille 13397, Schroeder, T., and Institute of Physics and Chemistry, Brandenburg Technical University, Cottbus 03046. Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy. United States: N. p., 2015. Web. doi:10.1063/1.4909529.
Chahine, G. A., Schülli, T. U., Zoellner, M. H., Guha, S., Reich, C., Zaumseil, P., Capellini, G., Richard, M. -I., Aix-Marseille Université, CNRS, IM2NP UMR 7334, Marseille 13397, Schroeder, T., & Institute of Physics and Chemistry, Brandenburg Technical University, Cottbus 03046. Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy. United States. https://doi.org/10.1063/1.4909529
Chahine, G. A., Schülli, T. U., Zoellner, M. H., Guha, S., Reich, C., Zaumseil, P., Capellini, G., Richard, M. -I., Aix-Marseille Université, CNRS, IM2NP UMR 7334, Marseille 13397, Schroeder, T., and Institute of Physics and Chemistry, Brandenburg Technical University, Cottbus 03046. 2015. "Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy". United States. https://doi.org/10.1063/1.4909529.
@article{osti_22412649,
title = {Strain and lattice orientation distribution in SiN/Ge complementary metal–oxide–semiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy},
author = {Chahine, G. A. and Schülli, T. U. and Zoellner, M. H. and Guha, S. and Reich, C. and Zaumseil, P. and Capellini, G. and Richard, M. -I. and Aix-Marseille Université, CNRS, IM2NP UMR 7334, Marseille 13397 and Schroeder, T. and Institute of Physics and Chemistry, Brandenburg Technical University, Cottbus 03046},
abstractNote = {This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction. The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10{sup −5} (Δa/a) with a spatial resolution of ∼0.5 μm. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive μ-Raman and μ-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling of the strain relaxation dynamics in the investigated structures.},
doi = {10.1063/1.4909529},
url = {https://www.osti.gov/biblio/22412649}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 7,
volume = 106,
place = {United States},
year = {Mon Feb 16 00:00:00 EST 2015},
month = {Mon Feb 16 00:00:00 EST 2015}
}