Electron beam induced current profiling of the p-ZnO:N/n-GaN heterojunction

Journal Article · Mon Feb 09 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4908291· OSTI ID:22412612

Stachowicz, M.; Chusnutdinow, S.; Jakieła, R.

The high quality p-n structures studied consist of nitrogen doped ZnO:N films grown by plasma assisted molecular beam epitaxy on n-type GaN templates. The nitrogen concentration, determined by secondary ion mass spectroscopy, is about 1 × 10{sup 20} cm{sup −3}. Temperature dependent photoluminescence studies confirm the presence of acceptor centers with an energy level lying approximately 130 meV above the valence band. The maximum forward-to-reverse current ratio I{sub F}/I{sub R} in the obtained p-n diodes is about 10{sup 7} at ±5 V, which is 2–5 orders of magnitude higher than previously reported for this type of heterojunctions. Electron-beam-induced current measurements confirm the presence of a p–n junction, located at the p-ZnO/n-GaN interface. The calculated diffusion length and activation energy of minority carriers are presented. The heterostructures exhibit strong absorption in the UV range with a four orders of magnitude high bright-to-dark current ratio.

• OSTI ID: 22412612
• Journal Information: Applied Physics Letters, Vol. 106, Issue 6; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
CONCENTRATION RATIO
DIFFUSION LENGTH
DOPED MATERIALS
ENERGY LEVELS
FILMS
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFACES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
P-TYPE CONDUCTORS
SCANNING ELECTRON MICROSCOPY
TEMPERATURE DEPENDENCE
VALENCE
ZINC OXIDES