Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Journal Article · Mon Jun 15 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4922724· OSTI ID:22412583

Gao, Tao ^[1]; Xu, Ruimin ^[1]; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng ^[2]

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1. Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China)
2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

• OSTI ID: 22412583
• Journal Information: Applied Physics Letters, Vol. 106, Issue 24; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ALUMINIUM COMPOUNDS
CAPACITANCE
ELECTRON MOBILITY
FERROELECTRIC MATERIALS
GALLIUM NITRIDES
LEAD COMPOUNDS
METALS
NONLINEAR PROBLEMS
PERMITTIVITY
POLARIZATION
SEMICONDUCTOR MATERIALS
TITANATES
TRANSISTORS
ZIRCONIUM COMPOUNDS