Quantum confinement effects across two-dimensional planes in MoS{sub 2} quantum dots
The low quantum yield (∼10{sup −5}) has restricted practical use of photoluminescence (PL) from MoS{sub 2} composed of a few layers, but the quantum confinement effects across two-dimensional planes are believed to be able to boost the PL intensity. In this work, PL from 2 to 9 nm MoS{sub 2} quantum dots (QDs) is excluded from the solvent and the absorption and PL spectra are shown to be consistent with the size distribution. PL from MoS{sub 2} QDs is also found to be sensitive to aggregation due to the size effect.
- OSTI ID:
- 22412569
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electrical Control of near-Field Energy Transfer between Quantum Dots and Two-Dimensional Semiconductors
Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation
GaN quantum dots in Al{sub x}Ga{sub 1{minus}x}N confined layer structures
Journal Article
·
Mon Jun 01 00:00:00 EDT 2015
· Nano Letters
·
OSTI ID:22412569
+8 more
Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation
Journal Article
·
Fri Aug 15 00:00:00 EDT 2008
· Journal of Applied Physics
·
OSTI ID:22412569
+6 more
GaN quantum dots in Al{sub x}Ga{sub 1{minus}x}N confined layer structures
Book
·
Wed Dec 31 00:00:00 EST 1997
·
OSTI ID:22412569
+1 more