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Title: Thin-layer black phosphorous/GaAs heterojunction p-n diodes

Abstract

Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface.

Authors:
; ; ;  [1];  [1]
  1. Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
22412567
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER MOBILITY; DOPED MATERIALS; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; HETEROJUNCTIONS; LAYERS; OPTOELECTRONIC DEVICES; PHOSPHORUS; P-N JUNCTIONS; QUANTUM EFFICIENCY; SUBSTRATES; THIN FILMS

Citation Formats

Gehring, Pascal, Urcuyo, Roberto, Duong, Dinh Loc, Burghard, Marko, Kern, Klaus, and Institut de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne. Thin-layer black phosphorous/GaAs heterojunction p-n diodes. United States: N. p., 2015. Web. doi:10.1063/1.4922531.
Gehring, Pascal, Urcuyo, Roberto, Duong, Dinh Loc, Burghard, Marko, Kern, Klaus, & Institut de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne. Thin-layer black phosphorous/GaAs heterojunction p-n diodes. United States. https://doi.org/10.1063/1.4922531
Gehring, Pascal, Urcuyo, Roberto, Duong, Dinh Loc, Burghard, Marko, Kern, Klaus, and Institut de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne. 2015. "Thin-layer black phosphorous/GaAs heterojunction p-n diodes". United States. https://doi.org/10.1063/1.4922531.
@article{osti_22412567,
title = {Thin-layer black phosphorous/GaAs heterojunction p-n diodes},
author = {Gehring, Pascal and Urcuyo, Roberto and Duong, Dinh Loc and Burghard, Marko and Kern, Klaus and Institut de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne},
abstractNote = {Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorous emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorous layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorous sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorous surface.},
doi = {10.1063/1.4922531},
url = {https://www.osti.gov/biblio/22412567}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 106,
place = {United States},
year = {Mon Jun 08 00:00:00 EDT 2015},
month = {Mon Jun 08 00:00:00 EDT 2015}
}