Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures
- Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland)
- Ecole Polytechnique Fédérale de Lausanne, Institute of Quantum Electronics and Photonics, Station 3, CH-1015 Lausanne (Switzerland)
- Technische Physik and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, University of Würzburg, Am Hubland, D-97074 Würzburg (Germany)
We demonstrate a non-classical photon emitter at near infrared wavelength based on a single (In,Ga)As/GaAs epitaxially grown columnar quantum dot. Charged exciton complexes have been identified in magneto-photoluminescence. Photon auto-correlation histograms from the recombination of a trion confined in a columnar dot exhibit sub-Poissonian statistics with an antibunching dip yielding g{sup (2)}(0) values of 0.28 and 0.46 at temperature of 10 and 80 K, respectively. Our experimental findings allow considering the GaAs-based columnar quantum dot structure as an efficient single photon source operating at above liquid nitrogen temperatures, which in some characteristics can outperform the existing solutions of any material system.
- OSTI ID:
- 22412564
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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