Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

Journal Article · Mon Jun 08 00:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4921962· OSTI ID:22412560

Borg, M.; Moselund, K.; Cutaia, D.; Riel, H. ^[1]; Gignac, L.; Breslin, C. M.; Bruley, J. ^[2]

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1. IBM Research – Zurich, 8803 Rüschlikon (Switzerland)
2. IBM Research – T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III–V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm{sup 2}/V s, while the alongside fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at V{sub DS} = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si.

• OSTI ID: 22412560
• Journal Information: Applied Physics Letters, Vol. 106, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CHEMICAL VAPOR DEPOSITION
ELECTRON MOBILITY
EPITAXY
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MONOCRYSTALS
NANOWIRES
OXIDES
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES