Photon energy dependence of photo-induced inverse spin-Hall effect in Pt/GaAs and Pt/Ge
- LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)
We report the photon energy dependence of photo-induced inverse spin Hall effect (ISHE) in Pt/GaAs and Pt/Ge Schottky junctions. The experimental results are compared with a spin drift-diffusion model, which highlights the role played by the different spin lifetime in the two semiconductors, in determining the energy dependence of the ISHE signal detected in the Pt layer. The good qualitative agreement between experiments and modelling indicates that photo-induced ISHE can be used as a tool to characterize spin lifetime in semiconductors.
- OSTI ID:
- 22412555
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 23; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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