Study on the frequency characteristics of nanogap electron devices

Xu, Ji; Wang, Qilong; Qi, Zhiyang; Zhai, Yusheng; Zhang, Xiaobing

doi:10.1063/1.4921866

Title: Study on the frequency characteristics of nanogap electron devices

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Abstract

Ballistic electron transport in the nanogap devices will make it practical to combine the advantages of solid-state devices and vacuum electron devices including high integration and high frequency characteristics. Although a number of experiments have been exploited on frequency characteristic in nanogap, less modeling or calculations were investigated at such scale yet. In this paper, the concept of mean flight time is proposed in order to theoretically determine the frequency in nanoscale. Traditionally, we have to first determine the frequency response diagram and then deduce the cut-off frequency. This work presents a new method for exploring the frequency characteristics of electron transport in a nanogap structure by calculations and numerical simulations. A double-gate structure was applied in the simulations, and the results suggest that the nanogap structure can perform in the THz range. Additionally, an equivalent circuit model was adopted to demonstrate the validity of this method. Our results provide a model for the intrinsic ballistic transportation of electrons inside the nanogap electron devices.

Authors:

Xu, Ji; Wang, Qilong; Qi, Zhiyang; Zhai, Yusheng; Zhang, Xiaobing ^[1]

School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

Publication Date:: Thu May 28 00:00:00 EDT 2015

OSTI Identifier:: 22410253

Resource Type:: Journal Article

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Volume: 117; Journal Issue: 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; COMPUTERIZED SIMULATION; DIAGRAMS; ELECTRONS; ENERGY GAP; EQUIVALENT CIRCUITS; FREQUENCY DEPENDENCE; NANOSTRUCTURES; NUMERICAL ANALYSIS; SOLIDS; THZ RANGE

Citation Formats


                    Xu, Ji, Wang, Qilong, Qi, Zhiyang, Zhai, Yusheng, and Zhang, Xiaobing. Study on the frequency characteristics of nanogap electron devices.  United States: N. p., 2015. 
        Web.  doi:10.1063/1.4921866.

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                    Xu, Ji, Wang, Qilong, Qi, Zhiyang, Zhai, Yusheng, & Zhang, Xiaobing. Study on the frequency characteristics of nanogap electron devices.  United States.  https://doi.org/10.1063/1.4921866

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                    Xu, Ji, Wang, Qilong, Qi, Zhiyang, Zhai, Yusheng, and Zhang, Xiaobing. 2015.  
        "Study on the frequency characteristics of nanogap electron devices".  United States.  https://doi.org/10.1063/1.4921866.

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@article{osti_22410253,

  title        = {Study on the frequency characteristics of nanogap electron devices},

  author       = {Xu, Ji and Wang, Qilong and Qi, Zhiyang and Zhai, Yusheng and Zhang, Xiaobing},

  abstractNote = {Ballistic electron transport in the nanogap devices will make it practical to combine the advantages of solid-state devices and vacuum electron devices including high integration and high frequency characteristics. Although a number of experiments have been exploited on frequency characteristic in nanogap, less modeling or calculations were investigated at such scale yet. In this paper, the concept of mean flight time is proposed in order to theoretically determine the frequency in nanoscale. Traditionally, we have to first determine the frequency response diagram and then deduce the cut-off frequency. This work presents a new method for exploring the frequency characteristics of electron transport in a nanogap structure by calculations and numerical simulations. A double-gate structure was applied in the simulations, and the results suggest that the nanogap structure can perform in the THz range. Additionally, an equivalent circuit model was adopted to demonstrate the validity of this method. Our results provide a model for the intrinsic ballistic transportation of electrons inside the nanogap electron devices.},

  doi          = {10.1063/1.4921866},

  url          = {https://www.osti.gov/biblio/22410253},
  journal      = {Journal of Applied Physics},

  issn         = {0021-8979},

  number       = 20,

  volume       = 117,

  place        = {United States},

  year         = {Thu May 28 00:00:00 EDT 2015},

  month        = {Thu May 28 00:00:00 EDT 2015}

}

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