skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electronic and magnetic properties of off-stoichiometric Co{sub 2}Mn{sub β}Si/MgO interfaces studied by x-ray magnetic circular dichroism

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4921538· OSTI ID:22410244
; ; ; ;  [1]; ;  [2]; ; ;  [3]
  1. Photon Factory, IMSS, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801 (Japan)
  2. Research Institute of Electrical Communication, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577 (Japan)
  3. Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814 (Japan)

We have studied the electronic and magnetic states of Co and Mn atoms at the interface of the Co{sub 2}Mn{sub β}Si (CMS)/MgO (β = 0.69, 0.99, 1.15, and 1.29) magnetic tunnel junction (MTJ) by means of x-ray magnetic circular dichroism. In particular, the Mn composition (β) dependences of the Mn and Co magnetic moments were investigated. The experimental spin magnetic moments of Mn, m{sub spin}(Mn), derived from x-ray magnetic circular dichroism weakly decreased with increasing Mn composition β in going from Mn-deficient to Mn-rich CMS films. This behavior was explained by first-principles calculations based on the antisite-based site-specific formula unit (SSFU) composition model, which assumes the formation of only antisite defect, not vacancies, to accommodate off-stoichiometry. Furthermore, the experimental spin magnetic moments of Co, m{sub spin}(Co), also weakly decreased with increasing Mn composition. This behavior was consistently explained by the antisite-based SSFU model, in particular, by the decrease in the concentration of Co{sub Mn} antisites detrimental to the half-metallicity of CMS with increasing β. This finding is consistent with the higher tunnel magnetoresistance ratios which have been observed for CMS/MgO/CMS MTJs with Mn-rich CMS electrodes.

OSTI ID:
22410244
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 20; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English