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Title: Fe-implanted 6H-SiC: Direct evidence of Fe{sub 3}Si nanoparticles observed by atom probe tomography and {sup 57}Fe Mössbauer spectroscopy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4921056· OSTI ID:22410179
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  1. Groupe de Physique des Matériaux, Université et INSA de Rouen - UMR CNRS 6634 - Normandie Université. F-76801 Saint Etienne du Rouvray (France)
  2. Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), CNRS-IN2P3-Univ. Paris-Sud 11, Bât. 108, 91405 Orsay (France)
  3. Service de Physique de l'Etat Condensé (DSM/IRAMIS/SPEC), UMR 3680 CNRS, Bât. 772, Orme des Merisiers, CEA Saclay 91191 Gif sur Yvette (France)
  4. Institut PPRIME, UPR 3346 CNRS, Université de Poitiers, ENSMA, SP2MI, téléport 2, 11 Bvd M. et P. Curie 86962 Futuroscope, Chasseneuil (France)

In order to understand ferromagnetic ordering in SiC-based diluted magnetic semiconductors, Fe-implanted 6H-SiC subsequently annealed was studied by Atom Probe Tomography, {sup 57}Fe Mössbauer spectroscopy and SQUID magnetometry. Thanks to its 3D imaging capabilities at the atomic scale, Atom Probe Tomography appears as the most suitable technique to investigate the Fe distribution in the 6H-SiC host semiconductor and to evidence secondary phases. This study definitely evidences the formation of Fe{sub 3}Si nano-sized clusters after annealing. These clusters are unambiguously responsible for the main part of the magnetic properties observed in the annealed samples.

OSTI ID:
22410179
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 18; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English