Enhanced magnetic hysteresis in Ni-Mn-Ga single crystal and its influence on magnetic shape memory effect
- Institute of Physics, ASCR, Na Slovance 2, 182 21 Prague (Czech Republic)
- Laboratory of Engineering Materials, Aalto University School of Engineering, PL 14200, FIN-00076 Aalto (Finland)
Enhanced magnetic hysteresis due to boron doping in combination with magnetic shape memory effect in Ni-Mn-Ga single crystal results in new interesting functionality of magnetic shape memory (MSM) alloys such as mechanical demagnetization. In Ni{sub 50.0}Mn{sub 28.5}Ga{sub 21.5} single crystal, the boron doping increased magnetic coercivity from few Oe to 270 Oe while not affecting the transformation behavior and 10 M martensite structure. However, the magnetic field needed for MSM effect also increased in doped sample. The magnetic behavior is compared to undoped single crystal of similar composition. The evidence from the X-ray diffraction, magnetic domain structure, magnetization loops, and temperature evolution of the magnetic coercivity points out that the enhanced hysteresis is caused by stress-induced anisotropy.
- OSTI ID:
- 22410164
- Journal Information:
- Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
BORON
COERCIVE FORCE
COMPARATIVE EVALUATIONS
DEMAGNETIZATION
DOMAIN STRUCTURE
DOPED MATERIALS
GALLIUM ALLOYS
HYSTERESIS
MAGNETIC FIELDS
MAGNETIZATION
MANGANESE ALLOYS
MARTENSITE
MONOCRYSTALS
NICKEL BASE ALLOYS
SHAPE MEMORY EFFECT
STRESSES
X-RAY DIFFRACTION