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Title: Magnetoresistance characteristics in individual Fe{sub 3}O{sub 4} single crystal nanowire

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4914535· OSTI ID:22410130
;  [1];  [2]
  1. Department of Physics, Boise State University, Boise, Idaho 83725 (United States)
  2. School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

We report on the magnetoresistance (MR) and electron transport measurements observed on a single crystal magnetite nanowire prepared using a hydrothermal synthesis method. High-resolution electron microscopy revealed the single crystal magnetite nanowires with 80–120 nm thickness and up to 8 μm in length. Magnetic measurements showed the typical Verwey transition around 120 K with a 100 Oe room temperature coercivity and 45 emu/g saturation magnetization, which are comparable to bulk magnetite. Electrical resistance measurements in 5–300 K temperature range were performed by scanning gate voltage and varying applied magnetic field. Electrical resistivity of the nanowire was found to be around 5 × 10{sup −4} Ω m, slightly higher than the bulk and has activation energy of 0.07 eV. A negative MR of about 0.7% is observed for as-synthesized nanowires at 0.3 T applied field. MR scaled with increasing applied magnetic field representing the field-induced alignment of magnetic domain. These results are attributed to the spin-polarized electron transport across the antiphase boundaries, which implicate promising applications for nanowires in magnetoelectronics.

OSTI ID:
22410130
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English