Fabrication and characterization of spin injector using a high-quality B2-ordered-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5}/MgO/Si(100) tunnel contact

Journal Article · Thu May 07 00:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4918567· OSTI ID:22410074

Kawame, Yu; Akushichi, Taiju; Shuto, Yusuke; Sugahara, Satoshi ^[1]; Takamura, Yota ^[2]

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1. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama, Kanagawa (Japan)
2. Department of Physical Electronics, Tokyo Institute of Technology, Tokyo (Japan)

We successfully fabricate a (100)-orientated B2-type-Co{sub 2}FeSi{sub 0.5}Al{sub 0.5} (CFSA)/MgO/Si(100) tunnel contact that is promising for an efficient spin injector for Si channels. The MgO barrier is formed by radical oxidation of an Mg thin film deposited on a Si(100) surface at room temperature and successive radical oxygen annealing at 400 °C. The CFSA electrode is grown on the MgO barrier at 400 °C by ultrahigh-vacuum molecular beam deposition, and it exhibits a (100)-orientated columnar polycrystalline structure with a high degree (63%) of B2-order. The MgO barrier near the interface of the CFSA/MgO junction is crystallized with the (100) orientation, i.e., the spin filter effect due to the MgO barrier could be expected for this junction. A three-terminal Si-channel spin-accumulation device with a CFSA/MgO/Si(100) spin injector is fabricated, and the Hanle effect of accumulated spin polarized electrons injected from this contact to the Si channel is observed.

• OSTI ID: 22410074
• Journal Information: Journal of Applied Physics, Vol. 117, Issue 17; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ANNEALING
COBALT COMPOUNDS
CRYSTAL STRUCTURE
DEPOSITION
ELECTRIC CONTACTS
FABRICATION
HETEROJUNCTIONS
INTERFACES
IRON SILICIDES
MAGNESIUM OXIDES
OXIDATION
POLYCRYSTALS
SEMICONDUCTOR JUNCTIONS
SILICON
SPIN ORIENTATION
SURFACES
THIN FILMS
TUNNEL EFFECT